SCD120S封裝:SOD-123

Marking:D12S

General Features:
Silicon Epitaxial Planar Diode和小
Highly Uniform VBR (±7%) gua風爸ranteed by Specification
Extremely Low VBR Tempe雪但rature Coefficient
Highly Uniform Current Distributi資靜on
RoHS Compliant & Halogen銀黑 Free

General Description:
This novel diode, manufactu問村red by DS proprietary sil一機icon process and structure, is 舞木featured with both highly uniform
breakdown voltage (VBR) 南湖and low temperature co-efficiency of V道遠BR. It is suitable for the音森 snubber circuit in 討錢various
AC/DC power conversi時能ons system. The devic行事e can effectively relax the elec讀北trical stress on system and therefore i請一mprove
reliability.

關鍵詞:SCD120S,D12S,TVS二極管,快恢複二極管