STF18N60M2 Description:

STF18N60M2 devices are N-車火channel MDmesh™ V Power MOSFETs數火 based on an innovative pr森費oprietary vertical pr見這ocess technology, whi樂高ch is combined with STM風水icroelectronics’ well-known PowerMESH™ 裡微horizontal layout st月村ructure. The resulting product has 風和extremely low onresistance, wh玩中ich is unmatched among sili老電conbased Power MOSFETs, maki他照ng it especially suitable fo跳門r applications which require superior p很快ower density and out村站standing efficiency.

■ Worldwide best RDS(on) * a北票rea

■ Higher VDSS rating喝我 and high dv/dt capability

■ Excellent switching pe東公rformance

■ 100% avalanche tested Applic場費ations

■ Switching applications