The FDS4435BZ is a 20 mOhm and 30 V P-channel po放時wertrench MOSFET. It is avai拍船lable in surface mount SOIC-廠日8 package.

FDS4435BZ This P-Channel MOSFET is produced務信 using semiconductor’s adv服做anced PowerTrench® process that ha村跳s been especially tailore影音d to minimize the on-state re路鐘sistance. This device is well suited 關信for Power Management a術河nd load switching applicati些話ons common in Notebook Compute朋山rs and Portable Batt亮鐵ery Packs.

FDS4435BZ Features:
•Max rDS(on) = 20mΩ at VGS =訊看 –10V, ID = –8.8A
•Max rDS(on) = 35mΩ at VGS = –4.5V, ID 了科= –6.7A
•Extended VGSS range (–25V) 雜司for battery applications
•HBM ESD protection level of ±3.8道動KV typical
•High performance tr間公ench technology for extre友老mely low rDS(on)
•High power and curr能哥ent handling capability
•Termination is Lead–free and Ro道事HS compliant

FDS4435BZ屬性:
Fet Type: P-Ch
Drain-to-Source Volta上日ge: [Vdss] 30V
Drain-Source On Resistance-Max: 20mΩ老秒
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 28nC