IRF630NS是IR的一(yī)款9.3A 200V&藍兒nbsp;N管MOS管,昆山東森(sēn制近)微電(diàn)子有限公司常備庫存,并提供技術支持.

IRF630NS Description:
IRF630NS Generation HEXFET® Po坐電wer MOSFETs from
International Rectifier utilize學如 advanced processing
techniques to achieve下畫 extremely low on-resistance 間人per
silicon area. This benefit, combin木高ed with the fast swi術件tching
speed and ruggedized device de靜票sign that HEXFET Powe照暗r
MOSFETs are well known for愛用, provides the designer with an
extremely efficient and reliable d內畫evice for use in a wide
variety of applications.
The TO-220 package is universally pref少制erred for all
commercial-industrial applications at科電 power dissipation levels
to approximately 50 watts. The low the熱女rmal resistance and
low package cost of th做答e TO-220 contribute to 是鐘its wide
acceptance throughout th哥那e industry.
The D2Pak is a surface mount長購 power package capable o藍金f
accommodating die sizes up to HEX-4. I都中t provides the
highest power capability and the lowe開討st possible onresistance
in any existing surface mou刀購nt package. The
D2Pak is suitable for 近嗎high current application煙愛s because of its
low internal connection resistan時票ce and can dissipate up 朋志to
2.0W in a typical surface劇船 mount application.
The through-hole version (I外刀RF630NL) is available for lowprofile ap腦快plication.

IRF630NS參數:
VDSS = 200V
RDS(on) = 0.30Ω
ID = 9.3A

IRF630NS應用:
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature刀視
* Fast Switching
* Fully Avalanche Rated
* Ease of Paralleling
* Simple Drive Requirements