The PN7006BSEC-R1 is a hi快日gh voltage, high speed power MOSFET a通場nd IGBT driver based on P_S輛年UB P_EPI process. The floa件船ting
channel driver can be u作到sed to drive two N-cha這鄉nnel power MOSFET or I事草GBT independently which operate暗木s up to 150 V.
Logic inputs are compatible with 機報standard CMOS or LSTTL out山電put, down to 3.3V logic. The output dr女很ivers feature a high
pulse current buffer匠務 stage designed for minimum driver c自行ross -conduction. Propagat美笑ion delays are matched to simplify us近日e
in high frequency applications. It h冷木as two versions PN7006A &am理友p; PN7006B.

Features
* Fully operational to +150師土 V
* 3.3 V logic compatible
* dV/dt Immunity ±50 V/錯服nsec
* Floating channel de朋購signed for bootstrap operation
* Gate drive supply range fro放什m 5.5 V to 20 V
* Output Source / Sink 開制Current Capability 450mA /900mA (at 可玩Vcc = 15V)
* Independent Logic Inp煙很uts to Accommodate AllTopologies
* -5V negative Vs ability
* Matched propagation dela是厭y for both channels