Advanced HEXFET®Power MOSFETs from Inte小習rnational Rectifier utilize 會錢advanced processing techniques to achie老喝ve extremely low on-res飛技istance per silicon area. Th也照is benefit, combined with the fast廠場 switching speed and 在少ruggedized device design that HEXF的煙ET power MOSFETs are well known 海們for, provides the designer with an extr人報emely efficient and reliable devi愛西ce for use in a wide variety of a爸關pplications.

The TO-220 package is unive麗暗rsally preferred for all co去家mmercial-industrial applications at 相如power dissipation levels to approxim們吧ately 50 watts. The low the農新rmal resistance and low p廠議ackage cost of the TO-220 con睡長tribute to its wide acceptance throu唱錯ghout the industry.

IRF3710PBF Features:
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating175°C Operating
TemperatureFast SwitchingFully Avalanche Rated
Lead-Free