|
|
| IRL2203NPBF |
|
|
| IRL2203NPBF是IR的一(yī)款MOS管|IGBT|模塊,我嗎下(wǒ)(wǒ)司不但為您提供可靠的全新原裝IRL2203N熱刀PBF，還可提供IRL2203NPBF應用資(zī算美)料、免費(fèi)樣品及産品研發技術支持舊好！詳情可緻電(diàn)垂詢. | | 元件型号：IRL2203NPBF | | 元件品牌：IR |
| 全新原裝正品保障，質量是企業的生(shēn機紙g)命！ |
|
|
|
|
|
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free IRL2203NPBF Description：
Advanced HEXFETfi Power MOSFETs from I分了nternational Rectifier util司愛ize advanced processing t相冷echniques to achieve extremely 商船low on-resistance per sil錯男icon area. This benefit,老司 combined with the fast switching sp什業eed and ruggedized device 志刀design that HEXFET power MOSFETs 來空are well known for, provides the desig雜在ner with an extremely efficien草區t and reliable device for use i喝城n a wide variety of app為空lications.
The TO-220 package is universally pr南年eferred for all commercial-ind行些ustrial applications at power dis黃員sipation levels to approximately 50 西朋watts. The low thermal r很少esistance and low package cost 光機of the TO-220 contribute to its wi化商de acceptance throughout t音木he industry.屬性Attributes Table | Fet Type | N-Ch | | No of Channels | 1 | | Drain-to-Source Voltage [V畫雜dss] | 30V | | Drain-Source On Resistance-Max | 7mΩ | | Rated Power Dissipation | 180|W | | Qg Gate Charge | 60nC | | Gate-Source Voltage-Max [Vgss] | 16V | | Drain Current | 116A | | Turn-on Delay Time | 11ns | | Turn-off Delay Time | 23ns | | Rise Time | 160ns | | Fall Time | 66ns | | Operating Temp Range | -55°C to +175°C | | Gate Source Threshold | 1V | | Technology | Si | | Input Capacitance | 3290pF |
|
|
|
| 聯系方式 |
|
總 機:0512-50710709
手 機:15950933050
微信:15950933050
業務QQ:41086900
技術QQ:1723916736
E-mail:master@ksmcu.com很化 |
|
|
您的位置：
誠信通店(diàn)
淘寶店(diàn)