IRF540N is Advanced HEXFET® Power MOSFETs中花 from International Rectifier utilize a朋長dvanced processing techniques to ach用兒ieve extremely low on-re會綠sistance per silicon 離多area. This benefit, combined wit樹員h the fast switching s樹生peed and ruggedized device design that子時 HEXFET power MOSFETs a地黃re well known for, provides t身鄉he designer with an extremely eff民匠icient and reliable device for use 商黃in a wide variety of applica用分tions.

The IRF540N is TO-220 package is universa舞學lly preferred for all commerc廠他ial-industrial applications a唱日t power dissipation levels to approx能議imately 50 watts. The low thermal r北自esistance and low package c兒麗ost of the TO-220 contribut她黑e to its wide acceptance through妹些out the industry.

IRF540N Features:

Advanced Process Techn下習ology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRF540NPBF is a Single N-Channel M紙錢OSFET. It comes in a TO-220AB packag電制e and is shipped in tubes.